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KND3306B
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| Mfr.: | KIA(可易亚) |
| Mfr. Part #: | |
| YJC. No: | |
| Package: | TO-252-2(DPAK) |
| ECCN: | EAR99 |
| Description: | N沟道，60V，80A |
| Datasheet: | Datasheet |
SPECIFICATION
Category
MOSFET
VGS
0.00025A 4V
Transistor polarity
N沟道
Rds On
10V 0.0085Ω 40A
Pd-Power Dissipation
84.5W(Tc)
Continuous drain current
80A
VDS
60V
Package
TO-252-2(DPAK)
类型
1个N沟道
漏源电压(Vdss)
60V
连续漏极电流(Id)
80A
导通电阻(RDS(on)@Vgs,Id)
8.5mΩ@10V,40A
功率(Pd)
84.5W
阈值电压(Vgs(th)@Id)
4V@250uA
QTY[pcs]
Price[CNY/pcs]
1+
2.46897
10+
2.17413
30+
2.04309
100+
1.87929
500+
1.54077
1000+
1.49709
QTY(Multiplicity:1):
Stock:
314Mpq:
2500 (圆盘)
Delivery:
2-3 Business Day
Total:
￥2.47
C002541435 KND3306B 由 KIA(可易亚) 设计生产，在 https://www.szyjc.com 沅竞成供应链有限公司 分立半导体-晶体管-MOSFET 里有现货销售,并且可以通过 原厂/代理 及其他正规渠道进行采购订货。C002541435 KND3306B 参考价格 ￥2.469，实时库存 314。TO-252-2(DPAK) VGS: 0.00025A 4V, Transistor polarity: N沟道, Rds On: 10V 0.0085Ω 40A, Pd-Power Dissipation: 84.5W(Tc), Continuous drain current: 80A, VDS: 60V, Package: TO-252-2(DPAK), 类型: 1个N沟道, 漏源电压(Vdss): 60V, 连续漏极电流(Id): 80A, 导通电阻(RDS(on)@Vgs,Id): 8.5mΩ@10V,40A, 功率(Pd): 84.5W, 阈值电压(Vgs(th)@Id): 4V@250uA。你可以下载 KND3306B 中文资料、引脚图、Datasheet数据手册功能说明书，并查看实时库存、价格、交期，特殊情况可做询报价、bom一键采购和选型替代。平台提供数据API对接，实时库存VMI服务和在线EDI交易。
Datasheet
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