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变更类型:Assembly Site,Materials,Test Site
变更编号:IPCN25366X
变更说明:TO-220-IC 5LD Assembly and Test Qualification to JCET Semiconductor (Suqian) Co.Ltd.
变更类型:Wafer Site
变更编号:IPCN25373X
变更说明:Wafer FAB site transfer of HDG4D, HDG4DA and HDJ4 Technology from BK6, Korea to AIZU, Japan
变更类型:Marking Molding,Wafer Site
变更编号:IPCN25380X
变更说明:Qualification of Minigates Vanguard die in MicroPak and MicroPak 2 Package
变更类型:Marking Molding,Wafer Site
变更编号:IPCN25380X
变更说明:Qualification of Minigates Vanguard die in MicroPak and MicroPak 2 Package
变更类型:Marking Molding,Wafer Site
变更编号:IPCN25380X
变更说明:Qualification of Minigates Vanguard die in MicroPak and MicroPak 2 Package
变更类型:Assembly Site,Materials,Test Site,Wafer Site
变更编号:IPCN25390X
变更说明:This IPCN was issued to qualify new die source in Taiwan for 3V Minigates and standardize the assembly and test site to increase the front end and back-end capacity and standardizing materials.
变更类型:Assembly Site,Materials,Test Site,Wafer Site
变更编号:IPCN25390X
变更说明:This IPCN was issued to qualify new die source in Taiwan for 3V Minigates and standardize the assembly and test site to increase the front end and back-end capacity and standardizing materials.
变更类型:Materials,Wafer Site
变更编号:IPCN25451X
变更说明:Qualification of onsemi Aizu Japan as wafer Fab for ONC25 Technology.
变更类型:Materials,Wafer Site
变更编号:IPCN25451Z
变更说明:Qualification of onsemi Aizu Japan as wafer Fab for ONC25 Technology.
变更类型:Wafer Process
变更编号:FPCN24945XB
变更说明:Improve FAB process variation of SuperFET3 FRFET by optimizing Mask design
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