Change:Assembly Site,Materials,Test Site
No.:IPCN25366X
Description:TO-220-IC 5LD Assembly and Test Qualification to JCET Semiconductor (Suqian) Co.Ltd.
Change:Wafer Site
No.:IPCN25373X
Description:Wafer FAB site transfer of HDG4D, HDG4DA and HDJ4 Technology from BK6, Korea to AIZU, Japan
Change:Marking Molding,Wafer Site
No.:IPCN25380X
Description:Qualification of Minigates Vanguard die in MicroPak and MicroPak 2 Package
Change:Marking Molding,Wafer Site
No.:IPCN25380X
Description:Qualification of Minigates Vanguard die in MicroPak and MicroPak 2 Package
Change:Marking Molding,Wafer Site
No.:IPCN25380X
Description:Qualification of Minigates Vanguard die in MicroPak and MicroPak 2 Package
Change:Assembly Site,Materials,Test Site,Wafer Site
No.:IPCN25390X
Description:This IPCN was issued to qualify new die source in Taiwan for 3V Minigates and standardize the assembly and test site to increase the front end and back-end capacity and standardizing materials.
Change:Assembly Site,Materials,Test Site,Wafer Site
No.:IPCN25390X
Description:This IPCN was issued to qualify new die source in Taiwan for 3V Minigates and standardize the assembly and test site to increase the front end and back-end capacity and standardizing materials.
Change:Materials,Wafer Site
No.:IPCN25451X
Description:Qualification of onsemi Aizu Japan as wafer Fab for ONC25 Technology.
Change:Materials,Wafer Site
No.:IPCN25451Z
Description:Qualification of onsemi Aizu Japan as wafer Fab for ONC25 Technology.
Change:Wafer Process
No.:FPCN24945XB
Description:Improve FAB process variation of SuperFET3 FRFET by optimizing Mask design