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变更类型:Materials,Wafer Site
变更编号:IPCN25451Z
变更说明:Qualification of onsemi Aizu Japan as wafer Fab for ONC25 Technology.
变更类型:Materials,Wafer Site
变更编号:IPCN25451Z
变更说明:Qualification of onsemi Aizu Japan as wafer Fab for ONC25 Technology.
变更类型:Materials
变更编号:IPCN25344X
变更说明:Those affected OPNs change bonding wire from Gold to Palladium Coated Copper (PCC) wire interconnect.
变更类型:Assembly Site,Materials,Test Site
变更编号:IPCN25366X
变更说明:TO-220-IC 5LD Assembly and Test Qualification to JCET Semiconductor (Suqian) Co.Ltd.
变更类型:Marking Molding,Wafer Site
变更编号:IPCN25380X
变更说明:Qualification of Minigates Vanguard die in MicroPak and MicroPak 2 Package
变更类型:Marking Molding,Wafer Site
变更编号:IPCN25380X
变更说明:Qualification of Minigates Vanguard die in MicroPak and MicroPak 2 Package
变更类型:Marking Molding,Wafer Site
变更编号:IPCN25380X
变更说明:Qualification of Minigates Vanguard die in MicroPak and MicroPak 2 Package
变更类型:Materials,Wafer Site
变更编号:IPCN25451X
变更说明:Qualification of onsemi Aizu Japan as wafer Fab for ONC25 Technology.
变更类型:Wafer Process
变更编号:FPCN24945XB
变更说明:Improve FAB process variation of SuperFET3 FRFET by optimizing Mask design
变更类型:Wafer Process
变更编号:FPCN24945XB
变更说明:Improve FAB process variation of SuperFET3 FRFET by optimizing Mask design
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